Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Samsung M392B1K70CM0-YH9 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

総合得点

Samsung M392B1K70CM0-YH9 8GB

Samsung M392B1K70CM0-YH9 8GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

バグを報告する

Samsung M392B1K70CM0-YH9 8GB

考慮すべき理由
Samsung M392B1K70CM0-YH9 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

40 62

周辺 -55% 低遅延
読み出し速度の高速化、GB/s

11 7.4

テスト平均値
書き込み速度の高速化、GB/s

10.0 5.9

テスト平均値

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Samsung M392B1K70CM0-YH9 8GB

主な特徴

メモリータイプ

DDR3 DDR3
PassMarkにおけるレイテンシー、ns

62 40
読み出し速度、GB/s

7.4 11.0
書き込み速度、GB/秒

5.9 10.0
メモリ帯域幅、mbps

10600 10600

Other

商品説明

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9
タイミング / クロック速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
ランキングPassMark（多ければ多いほど良い）

1612 2493

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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