Crucial Technology CT51264BD1339.M16F 4GB vs Crucial Technology CT4G4SFS624A.C4FB 4GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Crucial Technology CT4G4SFS624A.C4FB 4GB

Crucial Technology CT4G4SFS624A.C4FB 4GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 84

左右 70% 更低的延时
更快的写入速度，GB/s

8.6 6.8

测试中的平均数值

Crucial Technology CT4G4SFS624A.C4FB 4GB

需要考虑的原因
Crucial Technology CT4G4SFS624A.C4FB 4GB

报告一个错误

更快的读取速度，GB/s

14.8 12.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT4G4SFS624A.C4FB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 84
读取速度，GB/s

12.1 14.8
写入速度，GB/s

8.6 6.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2045 1574

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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UMAX Technology D4-2133-4GB-512X8-L 4GB

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Corsair VSA2GSDS667C4 2GB

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Kingston 9905678-024.A00G 4GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

Corsair CMD16GX4M2B3466C16 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Corsair CMW32GX4M4C3600C18 8GB

Corsair CMW32GX4M4C3600C18 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Kingston 9905711-017.A00G 4GB

Kingston 9905711-017.A00G 4GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

G Skill Intl F4-3200C15-8GVR 8GB

G Skill Intl F4-3200C15-8GVR 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Corsair CMW16GX4M2K3600C16 8GB

Corsair CMW16GX4M2K3600C16 8GB