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Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT4G4SFS824A.M8FE 4GB

Crucial Technology CT51264BD1339.M16F 4GB vs Crucial Technology CT4G4SFS824A.M8FE 4GB

总分
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Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分
star star star star star
Crucial Technology CT4G4SFS824A.M8FE 4GB

Crucial Technology CT4G4SFS824A.M8FE 4GB

差异 规格 评论

差异

Crucial Technology CT51264BD1339.M16F 4GB 需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 83
    左右 70% 更低的延时
  • 更快的写入速度，GB/s
    8.6 left arrow 8.3
    测试中的平均数值
Crucial Technology CT4G4SFS824A.M8FE 4GB 需要考虑的原因
Crucial Technology CT4G4SFS824A.M8FE 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.1 left arrow 12.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT4G4SFS824A.M8FE 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 83
  • 读取速度，GB/s
    12.1 left arrow 15.1
  • 写入速度，GB/s
    8.6 left arrow 8.3
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2045 left arrow 1663

Crucial Technology CT51264BD1339.M16F 4GB RAM的比较

Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB

Crucial Technology CT4G4SFS824A.M8FE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Samsung M3 78T2863QZS-CF7 1GB
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内存RAM
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
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Kingston ACR256X64D3S1333C9 2GB
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