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Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3000C16-8GSXKB 8GB

Crucial Technology CT51264BD1339.M16F 4GB vs G Skill Intl F4-3000C16-8GSXKB 8GB

总分
star star star star star
Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分
star star star star star
G Skill Intl F4-3000C16-8GSXKB 8GB

G Skill Intl F4-3000C16-8GSXKB 8GB

差异 规格 评论

差异

Crucial Technology CT51264BD1339.M16F 4GB 需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
G Skill Intl F4-3000C16-8GSXKB 8GB 需要考虑的原因
G Skill Intl F4-3000C16-8GSXKB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 25
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    19.7 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.1 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3000C16-8GSXKB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 24
  • 读取速度，GB/s
    12.1 left arrow 19.7
  • 写入速度，GB/s
    8.6 left arrow 15.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2045 left arrow 3950

Crucial Technology CT51264BD1339.M16F 4GB RAM的比较

Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB

G Skill Intl F4-3000C16-8GSXKB 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3000C16-8GSXKB 8GB
G Skill Intl F4-3000C16-8GSXKB 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK16GX4M4A2133C13 4GB
Corsair CMK16GX4M4A2133C13 4GB
内存RAM
ASint Technology SLB304G08-GGNHM 8GB
ASint Technology SLB304G08-GGNHM 8GB
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Kingston 9905678-041.A00G 4GB
Kingston 9905678-041.A00G 4GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Kingston 16ATF2G64AZ-2G1B1 8GB
Kingston 16ATF2G64AZ-2G1B1 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16A6A2G64HZ-2-2E1 16GB
Micron Technology 16A6A2G64HZ-2-2E1 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMK16GX4M1A2400C16 16GB
Corsair CMK16GX4M1A2400C16 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Samsung SF4721G4CKHH6DFSDS 8GB
Samsung SF4721G4CKHH6DFSDS 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Samsung M393A1G40DB1-CRC 8GB
Samsung M393A1G40DB1-CRC 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G6672 2GB
Patriot Memory (PDP Systems) PSD22G6672 2GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Kingston 9905624-022.A00G 8GB
Kingston 9905624-022.A00G 8GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5624-003.A00G 8GB
Kingston 99U5624-003.A00G 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston KHYXPX-MIE 8GB
Kingston KHYXPX-MIE 8GB
内存RAM