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Crucial Technology CT51264BD1339.M16F 4GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
比较
Crucial Technology CT51264BD1339.M16F 4GB vs Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
总分
Crucial Technology CT51264BD1339.M16F 4GB
总分
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
28
左右 11% 更低的延时
更快的写入速度,GB/s
8.6
7.5
测试中的平均数值
需要考虑的原因
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
报告一个错误
更快的读取速度,GB/s
14.4
12.1
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
28
读取速度,GB/s
12.1
14.4
写入速度,GB/s
8.6
7.5
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2045
2690
Crucial Technology CT51264BD1339.M16F 4GB RAM的比较
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Micron Technology 16ATF2G64AZ-2G6E1 16GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3466C16-16GTZSW 16GB
报告一个错误
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