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Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
比较
Crucial Technology CT51264BD1339.M16F 4GB vs Micron Technology 16ATF2G64AZ-2G3B1 16GB
总分
Crucial Technology CT51264BD1339.M16F 4GB
总分
Micron Technology 16ATF2G64AZ-2G3B1 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
35
左右 29% 更低的延时
需要考虑的原因
Micron Technology 16ATF2G64AZ-2G3B1 16GB
报告一个错误
更快的读取速度,GB/s
15
12.1
测试中的平均数值
更快的写入速度,GB/s
10.4
8.6
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
35
读取速度,GB/s
12.1
15.0
写入速度,GB/s
8.6
10.4
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2045
2672
Crucial Technology CT51264BD1339.M16F 4GB RAM的比较
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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A-DATA Technology DQVE1908 512MB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Chun Well Technology Holding Limited D4U1636144B 16GB
报告一个错误
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Bug description
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