Crucial Technology CT51264BD1339.M16F 4GB vs Samsung M471A1K43CB1-CRC 8GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Samsung M471A1K43CB1-CRC 8GB

Samsung M471A1K43CB1-CRC 8GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 37

左右 32% 更低的延时

Samsung M471A1K43CB1-CRC 8GB

需要考虑的原因
Samsung M471A1K43CB1-CRC 8GB

报告一个错误

更快的读取速度，GB/s

13.9 12.1

测试中的平均数值
更快的写入速度，GB/s

9.9 8.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Samsung M471A1K43CB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 37
读取速度，GB/s

12.1 13.9
写入速度，GB/s

8.6 9.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2045 2389

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Kingston 9905403-061.A00LF 2GB

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Samsung M378B5273DH0-CH9 4GB

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Hewlett-Packard 7EH55AA# 8GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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Smart Modular SF464128CK8I6GKSEG 4GB

Smart Modular SF464128CK8I6GKSEG 4GB

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G Skill Intl F3-1866C8-8GTX 8GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Corsair CMT32GX4M2Z3200C16 16GB

Corsair CMT32GX4M2Z3200C16 16GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

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Kingston 9905701-022.A00G 16GB

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Kingston 9905630-063.A00G 16GB

Kingston 9905630-063.A00G 16GB