Crucial Technology CT51264BD1339.M16F 4GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Crucial Technology CT51264BD1339.M16F 4GB vs Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 71

左右 65% 更低的延时
更快的写入速度，GB/s

8.6 8.3

测试中的平均数值

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

报告一个错误

更快的读取速度，GB/s

15.5 12.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 71
读取速度，GB/s

12.1 15.5
写入速度，GB/s

8.6 8.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2045 1902

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK32GX4M4D3600C18 8GB

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Kingston 99U5584-010.A00LF 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

G Skill Intl F4-2800C16-8GVR 8GB

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Kingston 99U5474-022.A00LF 2GB

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