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Crucial Technology CT51264BD1339.M16F 4GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
比较
Crucial Technology CT51264BD1339.M16F 4GB vs Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
总分
Crucial Technology CT51264BD1339.M16F 4GB
总分
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
29
左右 14% 更低的延时
需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
报告一个错误
更快的读取速度,GB/s
18.7
12.1
测试中的平均数值
更快的写入速度,GB/s
15.9
8.6
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
29
读取速度,GB/s
12.1
18.7
写入速度,GB/s
8.6
15.9
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2045
3594
Crucial Technology CT51264BD1339.M16F 4GB RAM的比较
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston KHYXPX-HYJ 8GB
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Chun Well Technology Holding Limited D4U0826190B 8GB
Kingston KHX1600C9D3/8G 8GB
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Micron Technology 16ATF2G64HZ-2G1B1 16GB
Samsung M471B5273CH0-CH9 4GB
Apacer Technology D22.23263S.002 16GB
Samsung M391B5673FH0-CH9 2GB
Kingston 9905744-066.A00G 32GB
Corsair CMSO8GX4M1A2133C15 8GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
报告一个错误
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Bug description
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