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Crucial Technology CT51264BD160B.C16F 4GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
比较
Crucial Technology CT51264BD160B.C16F 4GB vs Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
总分
Crucial Technology CT51264BD160B.C16F 4GB
总分
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
需要考虑的原因
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
报告一个错误
低于PassMark测试中的延时,ns
23
41
左右 -78% 更低的延时
更快的读取速度,GB/s
19.6
13.9
测试中的平均数值
更快的写入速度,GB/s
18.8
9.7
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
41
23
读取速度,GB/s
13.9
19.6
写入速度,GB/s
9.7
18.8
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2366
4095
Crucial Technology CT51264BD160B.C16F 4GB RAM的比较
Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C19-16GSXKB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-061.A00LF 2GB
Corsair CMW32GX4M2A2666C16 16GB
Samsung M471B5673FH0-CF8 2GB
Wilk Elektronik S.A. GY2400D464L15S/8G 8GB
Crucial Technology CT102464BF160B.C16 8GB
Kingston KHX2666C13/16GX 16GB
Samsung M393B2G70BH0-YK0 16GB
Avant Technology J644GU44J2320NF 32GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-2666C18-8GFX 8GB
Samsung M378A1G43DB0-CPB 8GB
SK Hynix HMA851U6CJR6N-VK 4GB
Samsung M378B5773DH0-CH9 2GB
Kingmax Semiconductor GLLH22F-18KII5------ 16GB
Crucial Technology CT102464BF160B-16F 8GB
Samsung M471A1K43BB1-CTD 8GB
Kingston 99U5584-005.A00LF 4GB
Chun Well Technology Holding Limited MD4U1636181DCW 16G
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
PNY Electronics PNY 2GB
SK Hynix HMA451U6AFR8N-TF 4GB
Samsung M378B5773DH0-CH9 2GB
Patriot Memory (PDP Systems) PSD48G213382 8GB
Kingston KVR533D2N4 512MB
G Skill Intl F4-3200C16-4GRK 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMK16GX4M2D3000C16 8GB
报告一个错误
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Bug description
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