Crucial Technology CT51264BD1339.M16F 4GB vs V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB

V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB

需要考虑的原因
V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 25

左右 -32% 更低的延时
更快的读取速度，GB/s

19.8 12.1

测试中的平均数值
更快的写入速度，GB/s

18.0 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 19
读取速度，GB/s

12.1 19.8
写入速度，GB/s

8.6 18.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2045 3543

RAM Latency Calculator

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Kingston KYXC0V-MID 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Micron Technology 8ATF1G64AZ-2G1A1 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Kingston ACR256X64D3S1333C9 2GB

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V-GEN D4S8GL32A8TS 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Samsung M471A1K43CB1-CRC 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Corsair CMZ16GX3M2A1866C9 8GB

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Kingston KCRXJ6-HYJ 16GB

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SpecTek Incorporated ?????????????????? 2GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Kingston KTD3KX-MIB 8GB

Kingston KTD3KX-MIB 8GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston K1CXP8-MIE 16GB

Kingston K1CXP8-MIE 16GB