Crucial Technology CT51264BD160B.C16F 4GB vs Corsair CMD32GX4M4B3000C15 8GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Corsair CMD32GX4M4B3000C15 8GB

Corsair CMD32GX4M4B3000C15 8GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

Corsair CMD32GX4M4B3000C15 8GB

需要考虑的原因
Corsair CMD32GX4M4B3000C15 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 41

左右 -17% 更低的延时
更快的读取速度，GB/s

15.2 13.9

测试中的平均数值
更快的写入速度，GB/s

12.6 9.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Corsair CMD32GX4M4B3000C15 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 35
读取速度，GB/s

13.9 15.2
写入速度，GB/s

9.7 12.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2366 3150

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS8G4D240FSA.M16FAD 8GB

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Kingston 9965433-034.A00LF 4GB

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G Skill Intl F4-3333C16-4GRRD 4GB

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Kingston MSI32D4S2S1ME-8 8GB

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A-DATA Technology DOVF1B163G2G 2GB

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Kingston 9905701-010.A00G 16GB

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Kingston 9905702-136.A00G 8GB

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A-DATA Technology VDQVE1B16 2GB

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Kingston KHX2666C16/8G 8GB

Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

Crucial Technology CT4G4DFS8266.C8FF 4GB

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Samsung M393B5170FH0-CH9 4GB

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Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

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Crucial Technology BLS8G4D240FSB.16FBD2 8GB