Crucial Technology CT51264BD160B.C16F 4GB vs Corsair CMK64GX4M8X4200C19 8GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Corsair CMK64GX4M8X4200C19 8GB

Corsair CMK64GX4M8X4200C19 8GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

更快的读取速度，GB/s

13.9 12.9

测试中的平均数值

Corsair CMK64GX4M8X4200C19 8GB

需要考虑的原因
Corsair CMK64GX4M8X4200C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 41

左右 -46% 更低的延时
更快的写入速度，GB/s

15.0 9.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Corsair CMK64GX4M8X4200C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 28
读取速度，GB/s

13.9 12.9
写入速度，GB/s

9.7 15.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2366 3152

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Samsung M3 93T5750CZA-CE6 2GB

Corsair CM4B16G2L2666A18K2 16GB

Corsair CM4B16G2L2666A18K2 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Kingston KHX1866C9D3/8GX 8GB

G Skill Intl F4-2800C16-4GVR 4GB

G Skill Intl F4-2800C16-4GVR 4GB