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Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB

Crucial Technology CT51264BD160B.C16F 4GB vs Crucial Technology BLS16G4S240FSD.16FAD 16GB

总分
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Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分
star star star star star
Crucial Technology BLS16G4S240FSD.16FAD 16GB

Crucial Technology BLS16G4S240FSD.16FAD 16GB

差异 规格 评论

差异

Crucial Technology CT51264BD160B.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 48
    左右 15% 更低的延时
  • 更快的读取速度，GB/s
    13.9 left arrow 10.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.7 left arrow 8.5
    测试中的平均数值
Crucial Technology BLS16G4S240FSD.16FAD 16GB 需要考虑的原因
Crucial Technology BLS16G4S240FSD.16FAD 16GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 48
  • 读取速度，GB/s
    13.9 left arrow 10.4
  • 写入速度，GB/s
    9.7 left arrow 8.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2366 left arrow 1858

Crucial Technology CT51264BD160B.C16F 4GB RAM的比较

Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB

Crucial Technology BLS16G4S240FSD.16FAD 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Corsair CMZ8GX3M2A1866C9 4GB
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内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
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内存RAM
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G Skill Intl F4-4000C18-32GTRS 32GB
内存RAM
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Samsung M393B1G70BH0-YK0 8GB
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内存RAM
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