Crucial Technology CT51264BF160B.M16F 4GB vs Crucial Technology BLS8G4D26BFSC.16FD2 8GB

总分

Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CT51264BF160B.M16F 4GB

总分

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

差异规格评论

差异

Crucial Technology CT51264BF160B.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BF160B.M16F 4GB

报告一个错误

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSC.16FD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 -4% 更低的延时
更快的读取速度，GB/s

18.4 11.8

测试中的平均数值
更快的写入速度，GB/s

14.3 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 27
读取速度，GB/s

11.8 18.4
写入速度，GB/s

8.2 14.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1854 3388

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

G Skill Intl F4-3600C19-8GSXWB 8GB

G Skill Intl F4-3600C19-8GSXWB 8GB

Kingston KHX2400C14S4/16G 16GB

Kingston KHX2400C14S4/16G 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology BLE8G4D30AEEA.K16FE 8GB

Crucial Technology BLE8G4D30AEEA.K16FE 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

V-GEN D4M8GL26A8TS6 8GB

V-GEN D4M8GL26A8TS6 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

A-DATA Technology AX4S2800316G18-B 16GB

A-DATA Technology AX4S2800316G18-B 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-4400C19-8GTZKK 8GB

G Skill Intl F4-4400C19-8GTZKK 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Ramaxel Technology RMSA3260ME78HAF-2666 8GB

Ramaxel Technology RMSA3260ME78HAF-2666 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Corsair CMW16GX4M1Z3600C18 16GB

Corsair CMW16GX4M1Z3600C18 16GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

A-DATA Technology AO2P24HCST2-BW8S 16GB

A-DATA Technology AO2P24HCST2-BW8S 16GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Kingston KTP9W1-MIE 16GB

Kingston KTP9W1-MIE 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Samsung M471A1K43CB1-CRC 8GB

Samsung M471A1K43CB1-CRC 8GB