Crucial Technology CT51264BF160B.M16F 4GB vs Samsung M393A5143DB0-CRC 4GB

总分

Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CT51264BF160B.M16F 4GB

总分

Samsung M393A5143DB0-CRC 4GB

Samsung M393A5143DB0-CRC 4GB

差异规格评论

差异

Crucial Technology CT51264BF160B.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BF160B.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 47

左右 40% 更低的延时
更快的读取速度，GB/s

11.8 10

测试中的平均数值
更快的写入速度，GB/s

8.2 7.5

测试中的平均数值

Samsung M393A5143DB0-CRC 4GB

需要考虑的原因
Samsung M393A5143DB0-CRC 4GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BF160B.M16F 4GB

Samsung M393A5143DB0-CRC 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 47
读取速度，GB/s

11.8 10.0
写入速度，GB/s

8.2 7.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1854 2308

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Apacer Technology 78.D2GF2.AU30B 16GB

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A-DATA Technology AO1P32MCST2-BZPS 16GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

G Skill Intl F4-3200C16-16GVK 16GB

G Skill Intl F4-3200C16-16GVK 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Corsair CMK16GX4M4A2666C16 4GB

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Kingston KHX1600C9D3/8G 8GB

Avant Technology W641GU48J5213ND 8GB

Avant Technology W641GU48J5213ND 8GB

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A-DATA Technology VDQVE1B16 2GB

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Corsair CMV16GX4M1A2133C15 16GB