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Elpida EBJ40UG8EFU0-GN-F 4GB
A-DATA Technology AO1P24HC8T1-BQXS 8GB

Elpida EBJ40UG8EFU0-GN-F 4GB vs A-DATA Technology AO1P24HC8T1-BQXS 8GB

总分
star star star star star
Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

总分
star star star star star
A-DATA Technology AO1P24HC8T1-BQXS 8GB

A-DATA Technology AO1P24HC8T1-BQXS 8GB

差异 规格 评论

差异

Elpida EBJ40UG8EFU0-GN-F 4GB 需要考虑的原因
Elpida EBJ40UG8EFU0-GN-F 4GB
报告一个错误
A-DATA Technology AO1P24HC8T1-BQXS 8GB 需要考虑的原因
A-DATA Technology AO1P24HC8T1-BQXS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 43
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    13.3 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.9 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Elpida EBJ40UG8EFU0-GN-F 4GB
A-DATA Technology AO1P24HC8T1-BQXS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 40
  • 读取速度，GB/s
    12.7 left arrow 13.3
  • 写入速度，GB/s
    8.0 left arrow 8.9
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 2204

Elpida EBJ40UG8EFU0-GN-F 4GB RAM的比较

Crucial Technology CT51264BF160B.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A-PB 4GB

A-DATA Technology AO1P24HC8T1-BQXS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
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Samsung M4 70T2864QZ3-CF7 1GB
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Corsair CMN32GX4M2Z3200C16 16GB
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Kingston KHX2133C11D3/4GX 4GB
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G Skill Intl F4-3333C16-16GTZSW 16GB
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Samsung M471B5673FH0-CF8 2GB
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内存RAM
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Kingston 99U5403-465.A00LF 8GB
SK Hynix HMA84GL7AMR4N-UH 32GB
SK Hynix HMA84GL7AMR4N-UH 32GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
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Kingston X0N6VG-HYD2 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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Crucial Technology CT16G4DFRA32A.C16FP 16GB
内存RAM
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Samsung M471B5173DB0-YK0 4GB
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Micron Technology 16ATF2G64HZ-2G3E2 16GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Kingston 9905624-008.A00G 8GB
Kingston 9905624-008.A00G 8GB
内存RAM