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Samsung 1600 CL10 Series 8GB
Corsair CMWX8GF2666C16W4 8GB

Samsung 1600 CL10 Series 8GB vs Corsair CMWX8GF2666C16W4 8GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Corsair CMWX8GF2666C16W4 8GB

Corsair CMWX8GF2666C16W4 8GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 26
    左右 4% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 9.9
    测试中的平均数值
Corsair CMWX8GF2666C16W4 8GB 需要考虑的原因
Corsair CMWX8GF2666C16W4 8GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Corsair CMWX8GF2666C16W4 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 26
  • 读取速度，GB/s
    16.1 left arrow 13.4
  • 写入速度，GB/s
    10.1 left arrow 9.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 2563

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Corsair CMWX8GF2666C16W4 8GB RAM的比较

Samsung M378A1G43EB1-CPB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M393B2G70BH0-CK0 16GB
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Kingston MSI24D4U7D8MH-16 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston 9905624-022.A00G 8GB
Kingston 9905624-022.A00G 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471A1K1KBB0-CPB 8GB
Samsung M471A1K1KBB0-CPB 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMWX8GF2666C16W4 8GB
Corsair CMWX8GF2666C16W4 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Kingston KHX3733C19D4/8GX 8GB
Kingston KHX3733C19D4/8GX 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Kingmax Semiconductor GLLH22F-18KII5------ 16GB
Kingmax Semiconductor GLLH22F-18KII5------ 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
G Skill Intl F4-2400C16-4GFX 4GB
G Skill Intl F4-2400C16-4GFX 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
内存RAM
A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR3 1600 2OZ 4GB
A-DATA Technology DDR3 1600 2OZ 4GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Samsung M471A2K43CB1-CRCR 16GB
Samsung M471A2K43CB1-CRCR 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avant Technology J641GU49J2320NE 8GB
Avant Technology J641GU49J2320NE 8GB
内存RAM
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
V-Color Technology Inc. TC48G24S817 8GB
V-Color Technology Inc. TC48G24S817 8GB
内存RAM