Elpida EBJ40UG8EFU0-GN-F 4GB vs G Skill Intl F4-3200C14-8GTZN 8GB

总分

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

总分

G Skill Intl F4-3200C14-8GTZN 8GB

G Skill Intl F4-3200C14-8GTZN 8GB

差异规格评论

差异

Elpida EBJ40UG8EFU0-GN-F 4GB

需要考虑的原因
Elpida EBJ40UG8EFU0-GN-F 4GB

报告一个错误

G Skill Intl F4-3200C14-8GTZN 8GB

需要考虑的原因
G Skill Intl F4-3200C14-8GTZN 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 43

左右 -34% 更低的延时
更快的读取速度，GB/s

20.6 12.7

测试中的平均数值
更快的写入速度，GB/s

15.0 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Elpida EBJ40UG8EFU0-GN-F 4GB

G Skill Intl F4-3200C14-8GTZN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 32
读取速度，GB/s

12.7 20.6
写入速度，GB/s

8.0 15.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 3593

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905584-016.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Crucial Technology CT4G4DFS824A.M8FB 4GB

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Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

G Skill Intl F4-3600C16-32GVK 32GB

G Skill Intl F4-3600C16-32GVK 32GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Wilk Elektronik S.A. GR3200S464L22S/8G 8GB

Wilk Elektronik S.A. GR3200S464L22S/8G 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology BL16G32C16U4W.16FE 16GB

Crucial Technology BL16G32C16U4W.16FE 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMSX16GX4M1A2400C16 16GB

Corsair CMSX16GX4M1A2400C16 16GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Golden Empire CL16-16-16 D4-2800 8GB

Golden Empire CL16-16-16 D4-2800 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Team Group Inc. TEAMGROUP-UD3-1600 8GB

Team Group Inc. TEAMGROUP-UD3-1600 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD10240

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393A1G40DB1-CRC 8GB

Samsung M393A1G40DB1-CRC 8GB