Elpida EBJ40UG8EFU0-GN-F 4GB vs Kingston X2YH1K-MIE 16GB

总分

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

总分

Kingston X2YH1K-MIE 16GB

Kingston X2YH1K-MIE 16GB

差异规格评论

差异

Elpida EBJ40UG8EFU0-GN-F 4GB

需要考虑的原因
Elpida EBJ40UG8EFU0-GN-F 4GB

报告一个错误

Kingston X2YH1K-MIE 16GB

需要考虑的原因
Kingston X2YH1K-MIE 16GB

报告一个错误

低于PassMark测试中的延时，ns

40 43

左右 -8% 更低的延时
更快的读取速度，GB/s

16.6 12.7

测试中的平均数值
更快的写入速度，GB/s

9.8 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Elpida EBJ40UG8EFU0-GN-F 4GB

Kingston X2YH1K-MIE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 40
读取速度，GB/s

12.7 16.6
写入速度，GB/s

8.0 9.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2057 2875

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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G Skill Intl F4-3000C15-8GVR 8GB

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Crucial Technology BLS4G4D26BFSB.8FB 4GB

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Samsung M393B5270CH0-CH9 4GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Crucial Technology BLS8G4S240FSD.M16FAD 8GB

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Samsung M378A1K43EB2-CWE 8GB

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Crucial Technology BL16G26C16U4R.16FE 16GB

Crucial Technology BL16G26C16U4R.16FE 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3400C16-16GTZ 16GB

G Skill Intl F4-3400C16-16GTZ 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

G Skill Intl F4-4400C19-16GTZR 16GB

G Skill Intl F4-4400C19-16GTZR 16GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

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G Skill Intl F4-4000C17-8GTRS 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Corsair CMK32GX4M4B3600C18 8GB

Corsair CMK32GX4M4B3600C18 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB