RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Elpida EBJ41UF8BDU5-GN-F 4GB
Samsung V-GeN D4S16GL26A8TL6 16GB
比较
Elpida EBJ41UF8BDU5-GN-F 4GB vs Samsung V-GeN D4S16GL26A8TL6 16GB
总分
Elpida EBJ41UF8BDU5-GN-F 4GB
总分
Samsung V-GeN D4S16GL26A8TL6 16GB
差异
规格
评论
差异
需要考虑的原因
Elpida EBJ41UF8BDU5-GN-F 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
32
左右 25% 更低的延时
需要考虑的原因
Samsung V-GeN D4S16GL26A8TL6 16GB
报告一个错误
更快的读取速度,GB/s
16
14.4
测试中的平均数值
更快的写入速度,GB/s
13.4
9.4
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Elpida EBJ41UF8BDU5-GN-F 4GB
Samsung V-GeN D4S16GL26A8TL6 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
24
32
读取速度,GB/s
14.4
16.0
写入速度,GB/s
9.4
13.4
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2267
1897
Elpida EBJ41UF8BDU5-GN-F 4GB RAM的比较
SK Hynix HMT451S6AFR8A-PB 4GB
Hewlett-Packard 7EH64AA# 8GB
Samsung V-GeN D4S16GL26A8TL6 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M4 70T2864QZ3-CF7 1GB
Kingston 9905701-143.A00G 16GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
Kingston 99U5584-017.A00LF 4GB
G Skill Intl F4-3200C22-32GRS 32GB
A-DATA Technology DDR3 1333G 2GB
G Skill Intl F4-4000C19-8GTZ 8GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3600C14-16GVK 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Corsair CMD32GX4M4B3000C15 8GB
Kingston KVR800D2N6/2G 2GB
Kingston KHX2933C17D4/16G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2666C18-32GTZN 32GB
AMD R5S38G1601U2S 8GB
Ramsta Ramsta-2666MHz-4G 4GB
Samsung DDR3 8GB 1600MHz 8GB
Panram International Corporation PUD42400C168GVS 8GB
Kingston 99U5471-033.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C
Kingston 99U5471-012.A00LF 4GB
Kingston 9905678-177.A00G 8GB
Kingston 9905403-061.A00LF 2GB
InnoDisk Corporation M4S0-8GS1NCIK 8GB
报告一个错误
×
Bug description
Source link