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Essencore Limited KD48GU88C-26N1600 8GB
Samsung M378A5244CB0-CVF 4GB

Essencore Limited KD48GU88C-26N1600 8GB vs Samsung M378A5244CB0-CVF 4GB

总分
star star star star star
Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

总分
star star star star star
Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB

差异 规格 评论

差异

Essencore Limited KD48GU88C-26N1600 8GB 需要考虑的原因
Essencore Limited KD48GU88C-26N1600 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 30
    左右 40% 更低的延时
  • 更快的读取速度，GB/s
    20.5 left arrow 16
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.4 left arrow 12.3
    测试中的平均数值
Samsung M378A5244CB0-CVF 4GB 需要考虑的原因
Samsung M378A5244CB0-CVF 4GB
报告一个错误
  • 更高的内存带宽，mbps
    23400 left arrow 21300
    左右 1.1 更高的带宽

规格

完整的技术规格清单
Essencore Limited KD48GU88C-26N1600 8GB
Samsung M378A5244CB0-CVF 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    18 left arrow 30
  • 读取速度，GB/s
    20.5 left arrow 16.0
  • 写入速度，GB/s
    16.4 left arrow 12.3
  • 内存带宽，mbps
    21300 left arrow 23400
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • 排名PassMark (越多越好)
    3530 left arrow 2709

Essencore Limited KD48GU88C-26N1600 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hexon Technology Pte Ltd HEXON 1GB

Samsung M378A5244CB0-CVF 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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Samsung M378A5244CB0-CVF 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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