G Skill Intl F2-5300CL4-1GBSA 1GB vs Crucial Technology CT16G4SFD824A.C16FN 16GB

总分

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

总分

Crucial Technology CT16G4SFD824A.C16FN 16GB

Crucial Technology CT16G4SFD824A.C16FN 16GB

差异规格评论

差异

G Skill Intl F2-5300CL4-1GBSA 1GB

需要考虑的原因
G Skill Intl F2-5300CL4-1GBSA 1GB

报告一个错误

更快的读取速度，GB/s

4 15.2

测试中的平均数值

Crucial Technology CT16G4SFD824A.C16FN 16GB

需要考虑的原因
Crucial Technology CT16G4SFD824A.C16FN 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 52

左右 -41% 更低的延时
更快的写入速度，GB/s

11.5 1,479.2

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-5300CL4-1GBSA 1GB

Crucial Technology CT16G4SFD824A.C16FN 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 37
读取速度，GB/s

4,226.4 15.2
写入速度，GB/s

1,479.2 11.5
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 4 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

590 2802

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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EXCELERAM EKBLACK4163016AD 8GB

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Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Samsung M471B5173QH0-YK0 4GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Kingston KHX2933C17D4/16G 16GB

Kingston KHX2933C17D4/16G 16GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Hyundai Inc AR32C16S8K2SU416R 8GB

Hyundai Inc AR32C16S8K2SU416R 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Corsair CM4B8G7L2666A16K2-O 8GB

Corsair CM4B8G7L2666A16K2-O 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Crucial Technology BLS16G4D240FSE.16FBD 16GB

Crucial Technology BLS16G4D240FSE.16FBD 16GB