G Skill Intl F2-8500CL5-2GBPI 2GB vs Crucial Technology BL16G32C16S4B.M8FB1 16GB

总分

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分

Crucial Technology BL16G32C16S4B.M8FB1 16GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

差异规格评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB

报告一个错误

更快的读取速度，GB/s

6 17.2

测试中的平均数值
更快的写入速度，GB/s

2,935.8 14.2

测试中的平均数值

Crucial Technology BL16G32C16S4B.M8FB1 16GB

需要考虑的原因
Crucial Technology BL16G32C16S4B.M8FB1 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 45

左右 -55% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 29
读取速度，GB/s

6,336.8 17.2
写入速度，GB/s

2,935.8 14.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1144 3461

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Samsung M378A2G43BB3-CWE 16GB

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Kingston 99U5474-028.A00LF 4GB

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Crucial Technology CT25664AA800.M16FG 2GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Smart Modular SF4641G8CK8IEHLSBG 8GB

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Samsung M393B1G70BH0-YK0 8GB

Kingston KHX3000C15D4/8GX 8GB

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Kingston KF3200C20S4/16GX 16GB

Kingston KF3200C20S4/16GX 16GB