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G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology BL8G30C15U4B.8FE 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB vs Crucial Technology BL8G30C15U4B.8FE 8GB

总分
star star star star star
G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分
star star star star star
Crucial Technology BL8G30C15U4B.8FE 8GB

Crucial Technology BL8G30C15U4B.8FE 8GB

差异 规格 评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB 需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 31
    左右 16% 更低的延时
Crucial Technology BL8G30C15U4B.8FE 8GB 需要考虑的原因
Crucial Technology BL8G30C15U4B.8FE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.9 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.6 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology BL8G30C15U4B.8FE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 31
  • 读取速度，GB/s
    13.2 left arrow 18.9
  • 写入速度，GB/s
    8.4 left arrow 14.6
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2070 left arrow 3356

G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较

A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Crucial Technology BL8G30C15U4B.8FE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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内存RAM
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Samsung M378B5273DH0-CH9 4GB
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内存RAM
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内存RAM
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内存RAM
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OCMEMORY OCM3200CL16D-16GBN 8GB
内存RAM
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Crucial Technology CT51264AC800.C16FC 4GB
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SK Hynix HMA82GU6DJR8N-WM 16GB
内存RAM