G Skill Intl F3-1333C9-4GIS 4GB vs Gloway International (HK) STK2400CL17SNB16GB 16GB

总分

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

总分

Gloway International (HK) STK2400CL17SNB16GB 16GB

Gloway International (HK) STK2400CL17SNB16GB 16GB

差异规格评论

差异

G Skill Intl F3-1333C9-4GIS 4GB

需要考虑的原因
G Skill Intl F3-1333C9-4GIS 4GB

报告一个错误

Gloway International (HK) STK2400CL17SNB16GB 16GB

需要考虑的原因
Gloway International (HK) STK2400CL17SNB16GB 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 28

左右 -22% 更低的延时
更快的读取速度，GB/s

17.5 12.4

测试中的平均数值
更快的写入速度，GB/s

13.2 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-1333C9-4GIS 4GB

Gloway International (HK) STK2400CL17SNB16GB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 23
读取速度，GB/s

12.4 17.5
写入速度，GB/s

7.5 13.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2014 3171

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Gloway International (HK) STK2400CL17SNB16GB 16GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Crucial Technology CT8G4SFS8213.C8FDR1 8GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Ramsta Ramsta-2400Mhz-8G 8GB