G Skill Intl F3-14900CL10-8GBXL 8GB vs Crucial Technology BLS4G3D1609DS1S00. 4GB

总分

G Skill Intl F3-14900CL10-8GBXL 8GB

G Skill Intl F3-14900CL10-8GBXL 8GB

总分

Crucial Technology BLS4G3D1609DS1S00. 4GB

Crucial Technology BLS4G3D1609DS1S00. 4GB

差异规格评论

差异

G Skill Intl F3-14900CL10-8GBXL 8GB

需要考虑的原因
G Skill Intl F3-14900CL10-8GBXL 8GB

报告一个错误

Crucial Technology BLS4G3D1609DS1S00. 4GB

需要考虑的原因
Crucial Technology BLS4G3D1609DS1S00. 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 39

左右 -5% 更低的延时
更快的读取速度，GB/s

15.6 14.7

测试中的平均数值
更快的写入速度，GB/s

9.8 9.2

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL10-8GBXL 8GB

Crucial Technology BLS4G3D1609DS1S00. 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

39 37
读取速度，GB/s

14.7 15.6
写入速度，GB/s

9.2 9.8
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2580 2487

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-14900CL10-8GBXL 8GB

G Skill Intl F3-14900CL10-8GBXL 8GB

Crucial Technology BLS4G3D1609DS1S00. 4GB

Crucial Technology BLS4G3D1609DS1S00. 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Apacer Technology 78.CAGPE.AUF0B 8GB

Apacer Technology 78.CAGPE.AUF0B 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Corsair CMWX16GC3600C18W2D 16GB

Corsair CMWX16GC3600C18W2D 16GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

Kingston 9965667-001.A00G 16GB

Kingston 9965667-001.A00G 16GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

G Skill Intl F4-2400C17-8GSXW 8GB

G Skill Intl F4-2400C17-8GSXW 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Micron Technology AFLD48EH1P 8GB

Micron Technology AFLD48EH1P 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Corsair CMK32GX4M2Z4000C18 16GB

Corsair CMK32GX4M2Z4000C18 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Crucial Technology CT16G4SFD824A.M16FD1 16GB

Crucial Technology CT16G4SFD824A.M16FD1 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Corsair CM4B16G4J2400A16K2-O 16GB

Corsair CM4B16G4J2400A16K2-O 16GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

SK Hynix HMA81GU6JJR8N-VK 8GB

SK Hynix HMA81GU6JJR8N-VK 8GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB