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G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMD16GX4M4C3200C15 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB vs Corsair CMD16GX4M4C3200C15 4GB

总分
star star star star star
G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分
star star star star star
Corsair CMD16GX4M4C3200C15 4GB

Corsair CMD16GX4M4C3200C15 4GB

差异 规格 评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB 需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB
报告一个错误
  • 更快的读取速度，GB/s
    17.4 left arrow 14.3
    测试中的平均数值
Corsair CMD16GX4M4C3200C15 4GB 需要考虑的原因
Corsair CMD16GX4M4C3200C15 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 31
    左右 -24% 更低的延时
  • 更快的写入速度，GB/s
    12.0 left arrow 10.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMD16GX4M4C3200C15 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    31 left arrow 25
  • 读取速度，GB/s
    17.4 left arrow 14.3
  • 写入速度，GB/s
    10.9 left arrow 12.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2735 left arrow 2870

G Skill Intl F3-14900CL8-4GBXM 4GB RAM的比较

Corsair CMD32GX3M4A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB

Corsair CMD16GX4M4C3200C15 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMK8GX4M2D2666C16 4GB
Corsair CMK8GX4M2D2666C16 4GB
内存RAM
AMD R748G2400S2S 8GB
AMD R748G2400S2S 8GB
Kingston KF2666C16D4/8G 8GB
Kingston KF2666C16D4/8G 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 99U5712-009.A00G 16GB
Kingston 99U5712-009.A00G 16GB
内存RAM
Mushkin 991988 (996988) 4GB
Mushkin 991988 (996988) 4GB
G Skill Intl F4-3300C16-16GTZSW 16GB
G Skill Intl F4-3300C16-16GTZSW 16GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Essencore Limited IM48GU88N24-FFFHAB 8GB
Essencore Limited IM48GU88N24-FFFHAB 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3466C16-4GTZ 4GB
G Skill Intl F4-3466C16-4GTZ 4GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
G Skill Intl F4-3200C16-16GTZSW 16GB
G Skill Intl F4-3200C16-16GTZSW 16GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
AMD R9S48G3206U2S 8GB
AMD R9S48G3206U2S 8GB
内存RAM