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G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3466C16-8GTZ 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB vs G Skill Intl F4-3466C16-8GTZ 8GB

总分
star star star star star
G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分
star star star star star
G Skill Intl F4-3466C16-8GTZ 8GB

G Skill Intl F4-3466C16-8GTZ 8GB

差异 规格 评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB 需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB
报告一个错误
G Skill Intl F4-3466C16-8GTZ 8GB 需要考虑的原因
G Skill Intl F4-3466C16-8GTZ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 31
    左右 -55% 更低的延时
  • 更快的读取速度，GB/s
    19.2 left arrow 17.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.3 left arrow 10.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3466C16-8GTZ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    31 left arrow 20
  • 读取速度，GB/s
    17.4 left arrow 19.2
  • 写入速度，GB/s
    10.9 left arrow 15.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2735 left arrow 3429

G Skill Intl F3-14900CL8-4GBXM 4GB RAM的比较

Corsair CMD32GX3M4A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB

G Skill Intl F4-3466C16-8GTZ 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMSX64GX4M4A2666C18 16GB
Corsair CMSX64GX4M4A2666C18 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3466C16-8GTZ 8GB
G Skill Intl F4-3466C16-8GTZ 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Samsung M378A5244CB0-CRC 4GB
Samsung M378A5244CB0-CRC 4GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Team Group Inc. 16GB
Team Group Inc. 16GB
内存RAM
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
G Skill Intl F4-3400C16-8GSXW 8GB
G Skill Intl F4-3400C16-8GSXW 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3200C15-8GVK 8GB
G Skill Intl F4-3200C15-8GVK 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Corsair CMD128GX4M8B2800C14 16GB
Corsair CMD128GX4M8B2800C14 16GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SK Hynix HMA81GR7AFR8N-UH 8GB
SK Hynix HMA81GR7AFR8N-UH 8GB
内存RAM
Kingston 99U5471-025.A00LF 4GB
Kingston 99U5471-025.A00LF 4GB
G Skill Intl F4-3466C16-4GVK 4GB
G Skill Intl F4-3466C16-4GVK 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology CT4G4DFS824A.C8FE 4GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Team Group Inc. DDR4 2666 8GB
Team Group Inc. DDR4 2666 8GB
内存RAM
Samsung M3 78T2953EZ3-CE7 1GB
Samsung M3 78T2953EZ3-CE7 1GB
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-3200C15-8GTZSW 8GB
G Skill Intl F4-3200C15-8GTZSW 8GB
内存RAM