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G Skill Intl F3-17000CL11-4GBXL 4GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB

G Skill Intl F3-17000CL11-4GBXL 4GB vs Crucial Technology CT8G4DFD8213.C16FBR2 8GB

总分
star star star star star
G Skill Intl F3-17000CL11-4GBXL 4GB

G Skill Intl F3-17000CL11-4GBXL 4GB

总分
star star star star star
Crucial Technology CT8G4DFD8213.C16FBR2 8GB

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

差异 规格 评论

差异

G Skill Intl F3-17000CL11-4GBXL 4GB 需要考虑的原因
G Skill Intl F3-17000CL11-4GBXL 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.2 left arrow 14.8
    测试中的平均数值
Crucial Technology CT8G4DFD8213.C16FBR2 8GB 需要考虑的原因
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 35
    左右 -3% 更低的延时
  • 更快的写入速度，GB/s
    11.0 left arrow 10.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-17000CL11-4GBXL 4GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 34
  • 读取速度，GB/s
    16.2 left arrow 14.8
  • 写入速度，GB/s
    10.7 left arrow 11.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2644 left arrow 2652

G Skill Intl F3-17000CL11-4GBXL 4GB RAM的比较

G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F3-14900CL9-4GBZL 4GB

Crucial Technology CT8G4DFD8213.C16FBR2 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Kingston KF552C40-16 16GB
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Crucial Technology BLS4G4D240FSE.M8FADM 4GB
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A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
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Corsair VSA2GSDS667C4 2GB
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Samsung M378A1K43EB2-CWE 8GB
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Corsair CMW32GX4M4K4266C19 8GB
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内存RAM
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Mushkin MR[A/B]4U266GHHF16G 16GB
Mushkin MR[A/B]4U266GHHF16G 16GB
内存RAM
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内存RAM
G Skill Intl F5-6400J3239G16G 16GB
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Crucial Technology CB8GU2400.C8D 8GB
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内存RAM
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Samsung M393B1G70BH0-YK0 8GB
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