G Skill Intl F3-2133C9-4GAB 4GB vs Samsung M471A5143SB1-CRC 4GB

总分

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

总分

Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

差异规格评论

差异

G Skill Intl F3-2133C9-4GAB 4GB

需要考虑的原因
G Skill Intl F3-2133C9-4GAB 4GB

报告一个错误

更快的读取速度，GB/s

16.4 14.9

测试中的平均数值
更快的写入速度，GB/s

11.0 10.6

测试中的平均数值

Samsung M471A5143SB1-CRC 4GB

需要考虑的原因
Samsung M471A5143SB1-CRC 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 36

左右 -50% 更低的延时
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2133C9-4GAB 4GB

Samsung M471A5143SB1-CRC 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 24
读取速度，GB/s

16.4 14.9
写入速度，GB/s

11.0 10.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2729 2196

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMG32GX4M2E3200C16 16GB

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Corsair CMK32GX4M2E3200C16 16GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Crucial Technology CT16G4SFRA32A.C8FB 16GB

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A-DATA Technology AO1P32NC8W1-BDAS 8GB

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Corsair CM4X16GE2400C14K4 16GB

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A-DATA Technology ADOVE1A0834E 1GB

Crucial Technology CT4G4SFS8213.C8FDD2 4GB

Crucial Technology CT4G4SFS8213.C8FDD2 4GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Mushkin MR[A/B]4U346GJJM8G 8GB

Mushkin MR[A/B]4U346GJJM8G 8GB

PNY Electronics PNY 2GB

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G Skill Intl F4-3200C16-32GTZR 32GB

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Corsair CMSX64GX4M2A3200C22 32GB

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