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G Skill Intl F3-2133C9-4GAB 4GB
Samsung V-GeN D4S4GL32A8TL 4GB

G Skill Intl F3-2133C9-4GAB 4GB vs Samsung V-GeN D4S4GL32A8TL 4GB

总分
star star star star star
G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

总分
star star star star star
Samsung V-GeN D4S4GL32A8TL 4GB

Samsung V-GeN D4S4GL32A8TL 4GB

差异 规格 评论

差异

G Skill Intl F3-2133C9-4GAB 4GB 需要考虑的原因
G Skill Intl F3-2133C9-4GAB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 58
    左右 38% 更低的延时
  • 更快的写入速度，GB/s
    11.0 left arrow 9.5
    测试中的平均数值
Samsung V-GeN D4S4GL32A8TL 4GB 需要考虑的原因
Samsung V-GeN D4S4GL32A8TL 4GB
报告一个错误
  • 更快的读取速度，GB/s
    18.5 left arrow 16.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-2133C9-4GAB 4GB
Samsung V-GeN D4S4GL32A8TL 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 58
  • 读取速度，GB/s
    16.4 left arrow 18.5
  • 写入速度，GB/s
    11.0 left arrow 9.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2729 left arrow 1998

G Skill Intl F3-2133C9-4GAB 4GB RAM的比较

Corsair CMZ8GX3M2A2133C11 4GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB

Samsung V-GeN D4S4GL32A8TL 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Transcend Information JM3200HLG-8G 8GB
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内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Samsung V-GeN D4S4GL32A8TL 4GB
Samsung V-GeN D4S4GL32A8TL 4GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
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Crucial Technology BLS4G4D240FSA.8FARG 4GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
PUSKILL PJ16TFK1GM8 16GB
PUSKILL PJ16TFK1GM8 16GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
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Kingston 9905625-011.A00G 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Terabyte Co Ltd RCX2-16G3000R 8GB
Terabyte Co Ltd RCX2-16G3000R 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
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Samsung M471A1K43EB1-CWE 8GB
内存RAM
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AMD AE34G1601U1 4GB
G Skill Intl F4-4400C19-8GTZSW 8GB
G Skill Intl F4-4400C19-8GTZSW 8GB
内存RAM
Elpida EBJ21UE8BDS0-DJ-F 2GB
Elpida EBJ21UE8BDS0-DJ-F 2GB
Samsung M378A1K43DB2-CVF 8GB
Samsung M378A1K43DB2-CVF 8GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Corsair CM4X16GE2666C18S2 16GB
Corsair CM4X16GE2666C18S2 16GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Kingston KHX2133C14D4/4G 4GB
Kingston KHX2133C14D4/4G 4GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-2666C19-8GVK 8GB
G Skill Intl F4-2666C19-8GVK 8GB
内存RAM