Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Samsung M471A1K43EB1-CWE 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

总分

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 46

左右 26% 更低的延时

Samsung M471A1K43EB1-CWE 8GB

需要考虑的原因
Samsung M471A1K43EB1-CWE 8GB

报告一个错误

更快的读取速度，GB/s

16 8.6

测试中的平均数值
更快的写入速度，GB/s

12.4 5.8

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Samsung M471A1K43EB1-CWE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 46
读取速度，GB/s

8.6 16.0
写入速度，GB/s

5.8 12.4
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1682 2660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

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Samsung M471A1K43EB1-CWE 8GB

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Samsung M471B5773DH0-CK0 2GB

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AMD R538G1601U2S-UO 8GB

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Crucial Technology BLS8G4D240FSC.16FBR2 8GB

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