G Skill Intl F3-2666C12-8GTXD 8GB vs Gloway International (HK) STK4U2400D17041C 4GB

总分

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

总分

Gloway International (HK) STK4U2400D17041C 4GB

Gloway International (HK) STK4U2400D17041C 4GB

差异规格评论

差异

G Skill Intl F3-2666C12-8GTXD 8GB

需要考虑的原因
G Skill Intl F3-2666C12-8GTXD 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 71

左右 61% 更低的延时
更快的读取速度，GB/s

18.2 15.8

测试中的平均数值
更快的写入速度，GB/s

11.5 7.9

测试中的平均数值

Gloway International (HK) STK4U2400D17041C 4GB

需要考虑的原因
Gloway International (HK) STK4U2400D17041C 4GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2666C12-8GTXD 8GB

Gloway International (HK) STK4U2400D17041C 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 71
读取速度，GB/s

18.2 15.8
写入速度，GB/s

11.5 7.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3067 1757

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW32GX4M2Z3600C18 16GB

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Samsung M393B1K70CH0-CH9 8GB

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Micron Technology 8ATF1G64AZ-2G6D1 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

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Kingston 99U5584-007.A00LF 4GB

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G Skill Intl F4-3600C19-8GVSB 8GB