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G Skill Intl F4-3600C19-8GSXWB 8GB
G Skill Intl F4-3466C18-8GTZRXB 8GB

G Skill Intl F4-3600C19-8GSXWB 8GB vs G Skill Intl F4-3466C18-8GTZRXB 8GB

总分
star star star star star
G Skill Intl F4-3600C19-8GSXWB 8GB

G Skill Intl F4-3600C19-8GSXWB 8GB

总分
star star star star star
G Skill Intl F4-3466C18-8GTZRXB 8GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

差异 规格 评论

差异

G Skill Intl F4-3600C19-8GSXWB 8GB 需要考虑的原因
G Skill Intl F4-3600C19-8GSXWB 8GB
报告一个错误
G Skill Intl F4-3466C18-8GTZRXB 8GB 需要考虑的原因
G Skill Intl F4-3466C18-8GTZRXB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 29
    左右 -71% 更低的延时
  • 更快的读取速度，GB/s
    20.9 left arrow 19.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.0 left arrow 15.8
    测试中的平均数值

规格

完整的技术规格清单
G Skill Intl F4-3600C19-8GSXWB 8GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 17
  • 读取速度，GB/s
    19.4 left arrow 20.9
  • 写入速度，GB/s
    15.8 left arrow 16.0
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3614 left arrow 3550

G Skill Intl F4-3600C19-8GSXWB 8GB RAM的比较

SK Hynix HMA851U6CJR6N-VK 4GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB

G Skill Intl F4-3466C18-8GTZRXB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

SK Hynix HMA41GU6AFR8N-TF 8GB
SK Hynix HMA41GU6AFR8N-TF 8GB
Crucial Technology CT8G4DFS8213.C8FBD1 8GB
Crucial Technology CT8G4DFS8213.C8FBD1 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
JUHOR JHD3000U1908JG 8GB
JUHOR JHD3000U1908JG 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Corsair CMK128GX4M4A2400C16 32GB
Corsair CMK128GX4M4A2400C16 32GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-3000C15-4GVRB 4GB
G Skill Intl F4-3000C15-4GVRB 4GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
Kingston 9905630-033.A00G 16GB
Kingston 9905630-033.A00G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C15-8GTZ 8GB
G Skill Intl F4-3600C15-8GTZ 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
G Skill Intl F4-2666C19-8GRS 8GB
G Skill Intl F4-2666C19-8GRS 8GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Team Group Inc. TEAMGROUP-UD4-4000 4GB
Team Group Inc. TEAMGROUP-UD4-4000 4GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMV8GX4M1A2400C16 8GB
Corsair CMV8GX4M1A2400C16 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3600C16-8GTZR 8GB
G Skill Intl F4-3600C16-8GTZR 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMD16GX4M4B3333C16 4GB
Corsair CMD16GX4M4B3333C16 4GB
内存RAM
Samsung M323R2GA3BB0-CQKOD 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Corsair MK16GX44A2666C16 4GB
Corsair MK16GX44A2666C16 4GB
内存RAM