Samsung M471B5173QH0-YK0 4GB vs G Skill Intl F4-3600C16-8GTZR 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

G Skill Intl F4-3600C16-8GTZR 8GB

G Skill Intl F4-3600C16-8GTZR 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

G Skill Intl F4-3600C16-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 45

左右 -61% 更低的延时
更快的读取速度，GB/s

19.1 12.3

测试中的平均数值
更快的写入速度，GB/s

16.9 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3600C16-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 28
读取速度，GB/s

12.3 19.1
写入速度，GB/s

8.0 16.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1992 3859

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CMG64GX4M2D3600C18 32GB

Corsair CMG64GX4M2D3600C18 32GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

G Skill Intl F4-3200C16-8GIS 8GB

G Skill Intl F4-3200C16-8GIS 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kingston KHX3000C15D4/4GX 4GB

Kingston KHX3000C15D4/4GX 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Crucial Technology BLS8G4D240FSB.16FADG 8GB

Crucial Technology BLS8G4D240FSB.16FADG 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3400C16-8GTZ 8GB

G Skill Intl F4-3400C16-8GTZ 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Teikon TMA851U6CJR6N-VKSC 4GB

Teikon TMA851U6CJR6N-VKSC 4GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Kingston KY7N41-MIE 8GB

Kingston KY7N41-MIE 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT8G4DFRA266.C8FB 8GB

Crucial Technology CT8G4DFRA266.C8FB 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-2400C15-8GFT 8GB

G Skill Intl F4-2400C15-8GFT 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-2400C17-4GFT 4GB

G Skill Intl F4-2400C17-4GFT 4GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

Corsair CMSX32GX4M2A2400C16 16GB

Corsair CMSX32GX4M2A2400C16 16GB