G Skill Intl F4-4500C19-8GTZSWE 8GB vs G Skill Intl F4-3600C16-32GTZR 32GB

总分

G Skill Intl F4-4500C19-8GTZSWE 8GB

G Skill Intl F4-4500C19-8GTZSWE 8GB

总分

G Skill Intl F4-3600C16-32GTZR 32GB

G Skill Intl F4-3600C16-32GTZR 32GB

差异规格评论

差异

G Skill Intl F4-4500C19-8GTZSWE 8GB

需要考虑的原因
G Skill Intl F4-4500C19-8GTZSWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

14 31

左右 55% 更低的延时
更快的读取速度，GB/s

25.1 20.8

测试中的平均数值
更快的写入速度，GB/s

19.3 16.1

测试中的平均数值

G Skill Intl F4-3600C16-32GTZR 32GB

需要考虑的原因
G Skill Intl F4-3600C16-32GTZR 32GB

报告一个错误

更高的内存带宽，mbps

21300 17000

左右 1.25 更高的带宽

规格

完整的技术规格清单

G Skill Intl F4-4500C19-8GTZSWE 8GB

G Skill Intl F4-3600C16-32GTZR 32GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

14 31
读取速度，GB/s

25.1 20.8
写入速度，GB/s

19.3 16.1
内存带宽，mbps

17000 21300

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

4182 3878

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Crucial Technology CT8G4SFS8213.C8FH1 8GB

Crucial Technology CT8G4SFS8213.C8FH1 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N

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takeMS International AG TMS2GB264D082-805G 2GB

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Micron Technology 16ATF2G64HZ-2G3A1 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB