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Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs Crucial Technology CT8G4SFD8213.C16FBD1 8GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
Crucial Technology CT8G4SFD8213.C16FBD1 8GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,066.5 left arrow 10.1
    测试中的平均数值
Crucial Technology CT8G4SFD8213.C16FBD1 8GB 需要考虑的原因
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 49
    左右 -36% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 36
  • 读取速度，GB/s
    4,577.1 left arrow 14.0
  • 写入速度，GB/s
    2,066.5 left arrow 10.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    737 left arrow 2416

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB RAM的比较

SK Hynix HYMP112U64CP8-S5 1GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Samsung M391A1K43BB2-CTD 8GB
Samsung M391A1K43BB2-CTD 8GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-2400C15-8GRB 8GB
G Skill Intl F4-2400C15-8GRB 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston 9905625-098.A00G 16GB
Kingston 9905625-098.A00G 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology CT8G4DFS8213.C8FDD1 8GB
Crucial Technology CT8G4DFS8213.C8FDD1 8GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Crucial Technology CT16G4DFRA32A.C8FE 16GB
Crucial Technology CT16G4DFRA32A.C8FE 16GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Kingston MSI24D4S7S7MH-16 16GB
Kingston MSI24D4S7S7MH-16 16GB
内存RAM
SK Hynix HMT451U6BFR8A-PB 4GB
SK Hynix HMT451U6BFR8A-PB 4GB
Gloway International (HK) STK4U2400D17081C 8GB
Gloway International (HK) STK4U2400D17081C 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Panram International Corporation M424016 4GB
Panram International Corporation M424016 4GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
SK Hynix HMA81GR7MFR8N-UH 8GB
SK Hynix HMA81GR7MFR8N-UH 8GB
内存RAM