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Samsung 1600 CL10 Series 8GB
Panram International Corporation W4N2666PS-8G 8GB

Samsung 1600 CL10 Series 8GB vs Panram International Corporation W4N2666PS-8G 8GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Panram International Corporation W4N2666PS-8G 8GB

Panram International Corporation W4N2666PS-8G 8GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
Panram International Corporation W4N2666PS-8G 8GB 需要考虑的原因
Panram International Corporation W4N2666PS-8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 25
    左右 -25% 更低的延时
  • 更快的读取速度，GB/s
    17.9 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.3 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Panram International Corporation W4N2666PS-8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 20
  • 读取速度，GB/s
    16.1 left arrow 17.9
  • 写入速度，GB/s
    10.1 left arrow 14.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 3127

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Panram International Corporation W4N2666PS-8G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Panram International Corporation W4N2666PS-8G 8GB
Panram International Corporation W4N2666PS-8G 8GB
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AMD R5316G1609U2K 8GB
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G Skill Intl F4-3000C14-16GTZR 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
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Peak Electronics 256X64M-67E 2GB
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Micron Technology 16GB 2133MHz DIMM 16GB
内存RAM
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Crucial Technology BLT2G3D1608DT1TX0 2GB
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Apacer Technology 78.CAGN7.4000C 8GB
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Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
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Micron Technology 36ASF2G72PZ-2G1B1 16GB
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Transcend Information AQD-SD4U16GN21-SE 16GB
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AMD AE34G2139U2 4GB
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内存RAM
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Samsung M393B1G70BH0-YK0 8GB
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Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
内存RAM
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Kingston KHX2133C11D3/4GX 4GB
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Corsair CM4X8GE2133C13K4 8GB
内存RAM
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Nanya Technology NT4GC72B4NA1NL-CG 4GB
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Corsair CMSX64GX4M2A2933C19 32GB
内存RAM