Hexon Technology Pte Ltd HEXON 1GB vs Corsair CMWX8GF2666C16W4 8GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Corsair CMWX8GF2666C16W4 8GB

Corsair CMWX8GF2666C16W4 8GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 13.4

测试中的平均数值

Corsair CMWX8GF2666C16W4 8GB

需要考虑的原因
Corsair CMWX8GF2666C16W4 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 62

左右 -138% 更低的延时
更快的写入速度，GB/s

9.9 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMWX8GF2666C16W4 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 26
读取速度，GB/s

3,556.6 13.4
写入速度，GB/s

1,843.6 9.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 2563

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M4 70T2953EZ3-CE6 1GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

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Kingston 9905474-019.A00LF 2GB

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Samsung M378A2K43CB1-CTD 16GB