Hexon Technology Pte Ltd HEXON 1GB vs Crucial Technology BLS4G4D240FSE.8FAR 4GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Crucial Technology BLS4G4D240FSE.8FAR 4GB

Crucial Technology BLS4G4D240FSE.8FAR 4GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 15.1

测试中的平均数值

Crucial Technology BLS4G4D240FSE.8FAR 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FAR 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 62

左右 -158% 更低的延时
更快的写入速度，GB/s

10.8 1,843.6

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology BLS4G4D240FSE.8FAR 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 24
读取速度，GB/s

3,556.6 15.1
写入速度，GB/s

1,843.6 10.8
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

542 2601

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4400C16-8GTZR 8GB

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Crucial Technology BLS4G4D240FSB.8FARG 4GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Samsung M3 78T5663RZ3-CF7 2GB

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Kingston 9905744-011.A00G 32GB

Kingston 39P5429-006.AO01 2GB

Kingston 39P5429-006.AO01 2GB

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Kingston KHX2800C14D4/8GX 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Apacer Technology 78.DAGNN.4030B 16GB

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Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology BLS4G4D240FSC.8FARG 4GB

Crucial Technology BLS4G4D240FSC.8FARG 4GB