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Hexon Technology Pte Ltd HEXON 1GB
Samsung M378A5244CB0-CVF 4GB

Hexon Technology Pte Ltd HEXON 1GB vs Samsung M378A5244CB0-CVF 4GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16
    测试中的平均数值
Samsung M378A5244CB0-CVF 4GB 需要考虑的原因
Samsung M378A5244CB0-CVF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 62
    左右 -107% 更低的延时
  • 更快的写入速度，GB/s
    12.3 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    23400 left arrow 6400
    左右 3.66 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
Samsung M378A5244CB0-CVF 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 30
  • 读取速度，GB/s
    3,556.6 left arrow 16.0
  • 写入速度，GB/s
    1,843.6 left arrow 12.3
  • 内存带宽，mbps
    6400 left arrow 23400
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • 排名PassMark (越多越好)
    542 left arrow 2709

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

Samsung M378A5244CB0-CVF 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung M378A5244CB0-CVF 4GB
Samsung M378A5244CB0-CVF 4GB
内存RAM
Mushkin 994083 4GB
Mushkin 994083 4GB
Crucial Technology BLS16G4D240FSC.16FBD 16GB
Crucial Technology BLS16G4D240FSC.16FBD 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2400C15-8GVS 8GB
G Skill Intl F4-2400C15-8GVS 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-4800C18-8GTRS 8GB
G Skill Intl F4-4800C18-8GTRS 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Kingston HP24D4U7S8MH-8 8GB
Kingston HP24D4U7S8MH-8 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2400C17-16GIS 16GB
G Skill Intl F4-2400C17-16GIS 16GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Kingston 9905665-009.A00G 4GB
Kingston 9905665-009.A00G 4GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Crucial Technology BL32G32C16U4BL.M16FB 32GB
Crucial Technology BL32G32C16U4BL.M16FB 32GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-2400C15-4GRK 4GB
G Skill Intl F4-2400C15-4GRK 4GB
内存RAM
Apacer Technology AQD-D4U8GN24-SE 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology CT8G4DFS8266.M8FJ 8GB
Crucial Technology CT8G4DFS8266.M8FJ 8GB
内存RAM
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
内存RAM