Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Kingston HP37D4U1S8ME-16XR 16GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs Kingston HP37D4U1S8ME-16XR 16GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

总分

Kingston HP37D4U1S8ME-16XR 16GB

Kingston HP37D4U1S8ME-16XR 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

报告一个错误

Kingston HP37D4U1S8ME-16XR 16GB

需要考虑的原因
Kingston HP37D4U1S8ME-16XR 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 35

左右 -3% 更低的延时
更快的读取速度，GB/s

19.2 9.8

测试中的平均数值
更快的写入速度，GB/s

14.9 7.9

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Kingston HP37D4U1S8ME-16XR 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

35 34
读取速度，GB/s

9.8 19.2
写入速度，GB/s

7.9 14.9
内存带宽，mbps

17000 25600

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2126 3527

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G4DFD8213.C16FBR 16GB

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Samsung M471A5244CB0-CTD 4GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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G Skill Intl F4-2400C17-4GNT 4GB

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Kingston 9905678-006.A00G 4GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

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G Skill Intl F4-2400C15-8GNT 8GB

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Kingston 9965525-140.A00LF 8GB

Samsung M378A2K43EB1-CWE 16GB

Samsung M378A2K43EB1-CWE 16GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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