Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB vs Patriot Memory (PDP Systems) 2133 C14 Series 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

总分
star star star star star
Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

差异

  • 低于PassMark测试中的延时,ns
    26 left arrow 39
    左右 33% 更低的延时
  • 更快的读取速度,GB/s
    16.2 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度,GB/s
    12.6 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽,mbps
    21300 left arrow 19200
    左右 1.11% 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时,ns
    26 left arrow 39
  • 读取速度,GB/s
    16.2 left arrow 13.7
  • 写入速度,GB/s
    12.6 left arrow 9.4
  • 内存带宽,mbps
    21300 left arrow 19200
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2955 left arrow 2397
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最新比较