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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Micron Technology 18ASF1G72PZ-2G1B1 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

总分
star star star star star
Micron Technology 18ASF1G72PZ-2G1B1 8GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 46
    左右 26% 更低的延时
Micron Technology 18ASF1G72PZ-2G1B1 8GB 需要考虑的原因
Micron Technology 18ASF1G72PZ-2G1B1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    11 left arrow 8.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.1 left arrow 5.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    34 left arrow 46
  • 读取速度，GB/s
    8.6 left arrow 11.0
  • 写入速度，GB/s
    5.8 left arrow 9.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1682 left arrow 2396

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4A-H9 8GB
Kingston 99P5723-006.A00G 8GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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