Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

总分

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

报告一个错误

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

报告一个错误

更快的读取速度，GB/s

20.3 12.4

测试中的平均数值
更快的写入速度，GB/s

17.3 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 28
读取速度，GB/s

12.4 20.3
写入速度，GB/s

9.6 17.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2329 3762

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingston 9905702-017.A00G 8GB

Kingston 9905702-017.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Kingston KHX2666C16S4/16G 16GB

Kingston KHX2666C16S4/16G 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Panram International Corporation M424051 4GB

Panram International Corporation M424051 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Essencore Limited KD48GS88J-26N1900 8GB

Essencore Limited KD48GS88J-26N1900 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Kingston 99U5678-029.A00G 8GB

Kingston 99U5678-029.A00G 8GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB

Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Kingston 9905702-150.A00G 8GB

Kingston 9905702-150.A00G 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Corsair CMK16GX4M4B3000C15 4GB

Corsair CMK16GX4M4B3000C15 4GB