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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Samsung M386A4G40DM0-CPB 32GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Samsung M386A4G40DM0-CPB 32GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

总分
star star star star star
Samsung M386A4G40DM0-CPB 32GB

Samsung M386A4G40DM0-CPB 32GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 55
    左右 49% 更低的延时
  • 更快的读取速度，GB/s
    12.4 left arrow 9.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.6 left arrow 7.2
    测试中的平均数值
Samsung M386A4G40DM0-CPB 32GB 需要考虑的原因
Samsung M386A4G40DM0-CPB 32GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Samsung M386A4G40DM0-CPB 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 55
  • 读取速度，GB/s
    12.4 left arrow 9.4
  • 写入速度，GB/s
    9.6 left arrow 7.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2329 left arrow 2117

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较

Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB

Samsung M386A4G40DM0-CPB 32GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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