Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

G Skill Intl F4-3600C16-32GTZN 32GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs G Skill Intl F4-3600C16-32GTZN 32GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

总分

G Skill Intl F4-3600C16-32GTZN 32GB

G Skill Intl F4-3600C16-32GTZN 32GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 30

左右 3% 更低的延时

G Skill Intl F4-3600C16-32GTZN 32GB

需要考虑的原因
G Skill Intl F4-3600C16-32GTZN 32GB

报告一个错误

更快的读取速度，GB/s

18.6 13.4

测试中的平均数值
更快的写入速度，GB/s

15.6 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

G Skill Intl F4-3600C16-32GTZN 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 30
读取速度，GB/s

13.4 18.6
写入速度，GB/s

9.0 15.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2423 3792

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-011.A03LF 2GB

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Corsair CMK8GX4M2B4266C19 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Samsung M393A2K43BB1-CRCA1 16GB

Samsung M393A2K43BB1-CRCA1 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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A-DATA Technology DQVE1908 512MB

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Kingston 9905711-015.A00G 4GB

Kingston 9905711-015.A00G 4GB