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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
总分
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
报告一个错误
需要考虑的原因
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
29
左右 -12% 更低的延时
更快的读取速度,GB/s
18.8
13.4
测试中的平均数值
更快的写入速度,GB/s
14.2
9.0
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
26
读取速度,GB/s
13.4
18.8
写入速度,GB/s
9.0
14.2
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2423
3576
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BD1339.M16F 4GB
Team Group Inc. TEAMGROUP-UD4-2400 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Avant Technology J642GU42J5213N4 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
Samsung M393B1K70QB0-CK0 8GB
Shenzhen Technology Co Ltd 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BL8G30C15U4B.M8FE1 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Samsung M393B1K70QB0-CK0 8GB
Kingston KHX2133C13D4/4GX 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Samsung M471B5273EB0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Crucial Technology CT25664AA800.M16FG 2GB
G Skill Intl F4-3600C14-16GTZRA 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
SK Hynix HMAA4GU6AJR8N-VK 32GB
Kingston 99U5471-012.A00LF 4GB
Micron Technology TEAMGROUP-UD4-3000 16GB
AMD R5S38G1601U2S 8GB
Corsair CM4X8GF2400C16N2 8GB
报告一个错误
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Bug description
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