Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Crucial Technology BL16G36C16U4BL.M16FE 16GB

总分
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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

总分
star star star star star
Crucial Technology BL16G36C16U4BL.M16FE 16GB

Crucial Technology BL16G36C16U4BL.M16FE 16GB

差异

  • 低于PassMark测试中的延时,ns
    24 left arrow 62
    左右 -158% 更低的延时
  • 更快的读取速度,GB/s
    19.7 left arrow 7.4
    测试中的平均数值
  • 更快的写入速度,GB/s
    18.4 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽,mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时,ns
    62 left arrow 24
  • 读取速度,GB/s
    7.4 left arrow 19.7
  • 写入速度,GB/s
    5.9 left arrow 18.4
  • 内存带宽,mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1612 left arrow 4182
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最新比较